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Freescale Semiconductor Technical Data
Document Number: MHV5IC1810N Rev. 0, 5/2006
RF LDMOS Wideband Integrated Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical Two - Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain -- 29 dB Power Added Efficiency -- 29% IMD -- - 34 dBc Driver Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2 = 95 mA, Pout = 35 dBm, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain -- 29 dB Spectral Regrowth @ 400 kHz Offset = - 67 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 1.1% rms * Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. Features * Characterized with Series Equivalent Large - Signal Impedance Parameters www..com and Common Source Scattering Parameters * On - Chip Matching (50 Ohm Input, >5 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R2 Suffix = 1500 Units per 16 mm, 13 inch Reel.
MHV5IC1810NR2
1805 - 1990 MHz, 5 W AVG., 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
16 1
CASE 978 - 03 PFP - 16 PLASTIC
VRD1 VRG1 VDS1 2 Stage IC VDS2/RFout
NC VRD1 VRG1 VDS1 GND RFin VGS1 VGS2
1 2 3 4 5 6 7 8 (Top View)
16 15 14 13 12 11 10 9
NC VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout VDS2/RFout NC
RFin
VGS1 VGS2
Quiescent Current Temperature Compensation
Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHV5IC1810NR2 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +12 - 65 to +150 150 12 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Final Application (Pout = 10 W CW) Driver Application (Pout = 2.25 W CW) Stage 1, 28 Vdc, IDQ1 = 120 mA Stage 2, 28 Vdc, IDQ2 = 90 mA Stage 1, 28 Vdc, IDQ1 = 120 mA Stage 2, 28 Vdc, IDQ2 = 90 mA Symbol RJC 9.2 3.3 10 3.5 Value (1) Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 0 (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two - Tone Test Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL 26.5 25 -- -- 29 29 - 34 -- -- - 27 - 10 dB % dBc dB
Typical Two - Tone Performances (In Freescale Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 5 W Avg., 1805 - 1880 MHz Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL -- -- -- -- 29 29 - 34 - 15 -- -- -- -- dB % dBc dB
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ1 = 105 mA, IDQ2 = 95 mA, Pout = 3.2 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz EDGE Modulation Power Gain Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps EVM SR1 SR2 -- -- -- -- 29 1.1 - 67 - 76 -- -- -- -- dB % rms dBc dBc
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
MHV5IC1810NR2 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics -- continued (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical CW Performances (In Freescale CW Test Fixture, 50 hm system) VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA, Pout = 2.25 W Avg., 1805 - 1990 MHz Power Gain Power Added Efficiency Input Return Loss Gps PAE IRL -- -- -- 29 19 - 13 -- -- -- dB % dB
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 3
1 VRD1 VRG1 Z10 VDS1 C10 RF INPUT 5 Z1 C2 VGS1 R1 VGS2 R2 C8 C4 C7 C3 8 7 Z2 6 4 2 3
NC
NC
16 Z9 15 C5 14 13 Z3 12 C6 11 10 C12 C15 C13 Z4 Z5 C14 Z6 C9 C11 Z8 Z7 VDS2
RF OUTPUT
Quiescent Current Temperature Compensation NC 9
Z1 Z2 Z3 Z4 Z5 Z6
0.120 0.257 0.103 0.195 0.388 0.273
x 0.044 Microstrip x 0.044 Microstrip x 0.170 Microstrip x 0.122 Microstrip x 0.084 Microstrip x 0.044 Microstrip
Z7 Z8 Z9 Z10 PCB
0.917 x 0.050 Microstrip 0.304 x 0.050 Microstrip 0.710 x 0.050 Microstrip 1.296 x 0.400 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 3. MHV5IC1810NR2 Test Circuit Schematic -- 1930 - 1990 MHz Table 6. MHV5IC1810NR2 Test Circuit Component Designations and Values -- 1930 - 1990 MHz
Part C2 C3, C4, C5, C6 C7, C8, C9 C10, C11 C12, C13 C14, C15 R1, R2 Description 22 pF 100A Chip Capacitor 8.2 pF 100A Chip Capacitors 10 nF Chip Capacitors (0805) 6.8 F Chip Capacitors (1812) 3.3 pF 100A Chip Capacitors 0.5 pF 100A Chip Capacitors 1 k, 1/8 W Chip Resistors (0805) Part Number 100A220GWT 100A8R2CW 08055C103KAT C4532X5R1H685MT 100A3R3BW 100A0R5BW Manufacturer ATC ATC AVX TDK ATC ATC
MHV5IC1810NR2 4 RF Device Data Freescale Semiconductor
VD1
VD2 C11
C10
C5
C9
C2
C13 C12
C6
C14 C15
C3 C7
C4 MHV5IC1810N Rev. 0 C8 R2 R1 VGS1 VGS2
Figure 4. MHV5IC1810NR2 Test Circuit Component Layout -- 1930 - 1990 MHz
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 35 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 34 33 32 31 30 IMD 29 28 27 1900 1920 1940 1960 1980 -40 -45 -50 2000 VDD = 28 Vdc, Pout = 5 W (Avg.) IDQ1 = 120 mA, IDQ2 = 90 mA 100 kHz Tone Spacing PAE Gps IRL -10 -15 -20 -25 -30 -35
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance @ Pout = 5 Watts (Avg.)
35 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 30 25 20 15 10 IMD 5 0 1900 PAE 1920 1940 1960 1980 -60 -70 2000 VDD = 28 Vdc, Pout = 20 dBm (Avg.) IDQ1 = 120 mA, IDQ2 = 90 mA 100 kHz Tone Spacing Gps IRL 0 -10 -20 -30 -40 -50
f, FREQUENCY (MHz)
Figure 6. Two - Tone Wideband Performance @ Pout = 20 dBm (Avg.)
IDQ1 = 120 mA IDQ2 = 140 mA IDQ1 = 120 mA IDQ2 = 115 mA IDQ1 = 120 mA IDQ2 = 90 mA IDQ1 = 60 mA IDQ2 = 90 mA IDQ1 = 120 mA IDQ2 = 45 mA IDQ1 = 120 mA IDQ2 = 65 mA IMD, INTERMODULATION DISTORTION (dBc) 32 31 Gps, POWER GAIN (dB) 30 29 28 27 VDD = 28 Vdc 26 Center Frequency = 1960 MHz 100 kHz Tone Spacing 25 1 10 Pout, OUTPUT POWER (WATTS) PEP -10 -20 -30 5th Order -40 -50 -60 -70 -80 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 7th Order VDD = 28 Vdc IDQ1 = 120 mA, IDQ2 = 90 mA f = 1960 MHz, 100 kHz Tone Spacing 3rd Order
100
Figure 7. Two - Tone Power Gain versus Output Power
Figure 8. Intermodulation Distortion Products versus Output Power
MHV5IC1810NR2 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
47 P3dB = 42.5 dBm (17.78 W) 45 Pout, OUTPUT POWER (dBc) P1dB = 42 dBm (15.85 W) 43 Actual 41 39 37 35 -2 0 2 4 6 8 10 Pin, INPUT POWER (dBm) VDD = 28 Vdc IDQ1 = 120 mA, IDQ2 = 90 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 1960 MHz Ideal
Figure 9. Pulse CW Output Power versus Input Power
36 34 Gps, POWER GAIN (dB) 32 30 85_C 28 26 24 0.1 PAE 20 10 0 100 VDD = 28 Vdc, IDQ1 = 120 mA IDQ2 = 90 mA, f = 1960 MHz TC = -30_C 25_C 30 Gps 60 25_C 85_C 40 50 PAE, POWER ADDED EFFICIENCY (%) -30_C 34 32 30 28 26 24 22 20 18 16 14 12 10 0 2
Gps, POWER GAIN (dB)
28 V
32 V
24 V 16 V VDD = 12 V 4 6 8 10 12 14 16 IDQ1 = 120 mA IDQ2 = 90 mA f = 1960 MHz 18 20 22 24
20 V
1
10
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Power Added Efficiency versus CW Output Power
33 32 Gps, POWER GAIN (dB) 31 TC = -30_C 30 29 28 27 26 1800 85_C 1850 1900 f, FREQUENCY (MHz) 25_C
Figure 11. Power Gain versus Output Power
VDD = 28 Vdc, Pout = 1 W Avg., IDQ1 = 120 mA, IDQ2 = 90 mA Two-Tone Measurements, Center Frequency = 1960 MHz
1950
2000
Figure 12. Power Gain versus Frequency
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS -- 1930 - 1990 MHz
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% ms)
10
8 -30_C 6
40
PAE, POWER ADDED EFFICIENCY (%)
TC = 85_C EVM
50 25_C
-45 -50 -55 -60 -65 -70 -75 -80 -85 0.1 1 10 SR @ 600 kHz 85_C SR @ 400 kHz TC = 85_C
-30_C
25_C -30_C 25_C
30
4 PAE 2 0 0.1 1 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc IDQ1 = 105 mA IDQ2 = 90 mA f = 1960 MHz EDGE Modulation
20
10 0 100
VDD = 28 Vdc IDQ1 = 105 mA IDQ2 = 90 mA f = 1960 MHz EDGE Modulation 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 13. EVM and Power Added Efficiency versus Output Power
108 MTTF FACTOR (HOURS X AMPS2)
Figure 14. Spectral Regrowth at 400 and 600 kHz versus Output Power
107
2nd Stage -10
GSM TEST SIGNAL
106 1st Stage 105 (dB)
-20 -30 -40 -50 -60 -70 100 110 120 130 140 150 160 170 180 190 -80 -90 -100 -110 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Reference Power
VBW = 30 kHz Sweep Time = 70 ms VBW = 30 kHz
104 90
400 kHz 600 kHz
400 kHz 600 kHz
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 15. MTTF Factor versus Junction Temperature
Figure 16. EDGE Spectrum
MHV5IC1810NR2 8 RF Device Data Freescale Semiconductor
1 VRD1 VRG1 Z10 VDS1 C10 RF INPUT 5 Z1 C1 C2 VGS1 R1 VGS2 R2 C8 C4 C7 C3 8 7 Z2 6 4 2 3
NC
NC
16 Z9 15 C5 14 13 Z3 12 C12 11 10 C6 Z4 C13 Z5 Z6 C9 C11 Z8 Z7 VDS2
RF OUTPUT
Quiescent Current Temperature Compensation NC 9
Z1 Z2 Z3 Z4 Z5 Z6
0.120 x 0.044 Microstrip 0.257 x 0.044 Microstrip 0.274 x 0.170 Microstrip 0.112 x 0.084 Microstrip 0.289 x 0.084 Microstrip 0.273 x 0.044 Microstrip
Z7 Z8 Z9 Z10 PCB
0.917 x 0.050 Microstrip 0.304 x 0.050 Microstrip 0.710 x 0.050 Microstrip 1.296 x 0.400 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 17. MHV5IC1810NR2 Test Circuit Schematic -- 1805 - 1880 MHz Table 7. MHV5IC1810NR2 Test Circuit Component Designations and Values -- 1805 - 1880 MHz
Part C1 C2 C3, C4, C5, C6 C7, C8, C9 C10, C11 C12, C13 R1, R2 Description 0.8 pF 100A Chip Capacitor 27 pF 100A Chip Capacitor 8.2 pF 100A Chip Capacitors 10 nF Chip Capacitors (0805) 6.8 F Chip Capacitors (1812) 3.3 pF 100A Chip Capacitors 1 k, 1/8 W Chip Resistors (0805) Part Number 100A0R8BW 100A270GWT 100A8R2CW 08055C103KAT C4532X5R1H685MT 100A3R3BW Manufacturer ATC ATC ATC AVX TDK ATC
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 9
VD1
VD2 C11
C10
C5
C9
C2 C1 C3 C7 C4
C12
C13
C6
MHV5IC1810N Rev. 0 C8 R2 R1 VGS1 VGS2
Figure 18. MHV5IC1810NR2 Test Circuit Component Layout -- 1805 - 1880 MHz
MHV5IC1810NR2 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 1805 - 1880 MHz
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% ms)
12 10 8 6 PAE 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc IDQ1 = 105 mA IDQ2 = 90 mA f = 1840 MHz EDGE Modulation TC = 85_C EVM 25_C
60 50 40 30 20 10 0 100 PAE, POWER ADDED EFFICIENCY (%)
-45 -50 25_C -55 -60 -65 -70 -30_C -75 SR @ 600 kHz -80 -30_C -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. 85_C SR @ 400 kHz TC = 85_C VDD = 28 Vdc IDQ1 = 105 mA IDQ2 = 90 mA f = 1840 MHz EDGE Modulation 25_C
-30_C
Figure 19. Spectral Regrowth at 400 and 600 kHz versus Output Power
Figure 20. Spectral Regrowth at 400 and 600 kHz versus Output Power
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 11
Zo = 50
f = 2000 MHz Zload f = 1800 MHz f = 2000 MHz Zin
f = 1800 MHz
VDD = 28 Vdc, IDQ1 = 120 mA, IDQ2 = 90 mA,Pout = 5 W Avg. f MHz 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 Zin = Zin W 43.82 + j6.83 43.67 + j7.10 43.50 + j7.34 43.31 + j7.55 43.13 + j7.76 42.96 + j7.96 42.76 + j8.15 42.56 + j8.34 42.36 + j8.50 42.16 + j8.65 41.97 + j8.79 Zload W 3.49 + j8.58 3.43 + j8.96 3.36 + j9.33 3.31 + j9.68 3.24 + j10.04 3.19 + j10.38 3.14 + j10.72 3.07 + j11.03 3.04 + j11.36 2.99 + j11.65 2.94 + j11.94
Test circuit impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Zload =
Z
in
Z
load
Figure 21. Series Equivalent Input and Load Impedance MHV5IC1810NR2 12 RF Device Data Freescale Semiconductor
NOTES
MHV5IC1810NR2 RF Device Data Freescale Semiconductor 13
NOTES
MHV5IC1810NR2 14 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
h X 45 _ A E2
1 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100
14 x e
D e/2
D1
8
9
E1
8X
B
BOTTOM VIEW
E CB
S
bbb Y A A2
M
b1 c
C
DATUM PLANE SEATING PLANE
H
SECT W - W
L1
ccc C
q
W W L 1.000 0.039 DETAIL Y A1
GAUGE PLANE
CASE 978 - 03 ISSUE C PFP- 16 PLASTIC
RF Device Data Freescale Semiconductor
CCC EE CCC EE
b aaa
M
c1
CA
S
DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc
MHV5IC1810NR2 15
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MHV5IC1810NR2
Rev. 16 0, 5/2006 Document Number: MHV5IC1810N
RF Device Data Freescale Semiconductor

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